ON Semiconductor
2SC5415AE-TD-E
Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5415A
- Package
- PCP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 12 V
- Emitter- Base Voltage VEBO
- 2 V
- Maximum DC Collector Current
- 1 uA
- Gain Bandwidth Product fT
- 6.7 GHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 90
- Pd - Power Dissipation
- 800 mW
- Unit Weight
- 0.001804 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.