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ON Semiconductor

SSVPZT751T1G

Bipolar Transistors - BJT SS SOT223 HC XSTR SP

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
PZT751
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

10 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
60 V
Collector- Base Voltage VCBO
80 V
Emitter- Base Voltage VEBO
5 V
Maximum DC Collector Current
2 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
75 at 50 mA, 2 V, 75 at 500 mA, 2 V, 75 at 1 A, 2 V, 40 at 2 A, 2 V
Pd - Power Dissipation
800 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SSVPZT751T1G Specifications and Datasheet | ChipSourceHub