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Nexperia

PBSS304PD,115

Bipolar Transistors - BJT PNP 80V 3A SC-74

Basic Information

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Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
TSOP-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
80 V
Collector- Base Voltage VCBO
80 V
Emitter- Base Voltage VEBO
5 V
Maximum DC Collector Current
3 A
Pd - Power Dissipation
360 mW
Gain Bandwidth Product fT
110 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
155 at 500 mA, 2V
Height
1 mm
Show more parameters (6)
Length
3.1 mm
Technology
Si
Width
1.7 mm
DC Collector/Base Gain hfe Min
155 at 500 mA, 2 V, 140 at 1 A, 2 V, 105 at 2 A, 2 V, 60 at 3 A, 2 V, 30 at 4 A, 2 V, 20 at 5 A, 2 V
Qualification
AEC-Q101
Part # Aliases
PBSS304PD T/R

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PBSS304PD,115 Specifications and Datasheet | ChipSourceHub