Toshiba
TTC0002(Q)
Bipolar Transistors - BJT NPN PWR Amp Trans 18A 35A 180W 160V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TTC0002
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 2 V
- Maximum DC Collector Current
- 18 A
- Gain Bandwidth Product fT
- 30 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 160
- Continuous Collector Current
- 18 A
- Pd - Power Dissipation
- 180 W
Show more parameters (1)
- Unit Weight
- 0.343921 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.