NXP Semiconductors
MRFE6VP8600HSR5
RF MOSFET Transistors VHV6 600W NI1230S 50V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- NI-1230S
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 140 V
- Gain
- 18.8 dB
- Output Power
- 600 W
- Maximum Operating Temperature
- + 150 C
- Configuration
- Dual
- Operating Frequency
- 470 MHz to 860 MHz
- Type
- RF Power MOSFET
- Forward Transconductance - Min
- 15.6 S
- Pd - Power Dissipation
- 1.52 kW
- Vgs - Gate-Source Voltage
- 10 V
Show more parameters (3)
- Vgs th - Gate-Source Threshold Voltage
- 2.07 V
- Part # Aliases
- 935310858178
- Unit Weight
- 0.467870 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.