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Wolfspeed / Cree

CGHV50200F

RF JFET Transistors GaN HEMT 4.4-5.0GHz, 200 Watt

Basic Information

View Datasheet ↗
Manufacturer
Cree, Inc.
Brand
Wolfspeed / Cree
Product Category
RF JFET Transistors
Package
4402015
Mounting Style
Screw Mount
Packaging
Tray
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Type
HEMT
Technology
GaN
Gain
11.5 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Breakdown Voltage
- 10 V to 2 V
Id - Continuous Drain Current
17 A
Output Power
180 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Operating Frequency
4.4 GHz to 5 GHz
Operating Temperature Range
- 40 C to + 150 C
Show more parameters (2)
Development Kit
CGHV50200F-AMP
Vgs th - Gate-Source Threshold Voltage
- 3.4 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGHV50200F Specifications and Datasheet | ChipSourceHub