STMicroelectronics
RF3L05150CB4
RF MOSFET Transistors 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Package
- LBB-4
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
Technical Specifications
13 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2.5 A
- Vds - Drain-Source Breakdown Voltage
- 28 V
- Rds On - Drain-Source Resistance
- 1 Ohms
- Operating Frequency
- 945 MHz
- Gain
- 16 dB
- Output Power
- 150 W
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- CN
- Number of Channels
- 1 Channel
- Type
- RF Power MOSFET
Show more parameters (1)
- Unit Weight
- 0.084658 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.