Qorvo
QPD2796
RF JFET Transistors 2.5-2.7GHz GaN 200W 48V
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- QPD
- Package
- NI400-2
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 20 dB
- Transistor Polarity
- N-Channel
- Output Power
- 200 W
- Minimum Operating Temperature
- - 40 C
- Application
- Microcell Base Station, W-CDMA / LTE
- Configuration
- Single
- Operating Frequency
- 2.5 GHz to 2.7 GHz
- Part # Aliases
- 1130963
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.