IXYS
IXFX21N100F
RF MOSFET Transistors IXFX21N100F F-Class HiPerRF Capable MOSFET IXFX21N100F IXYS
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- RF MOSFET Transistors
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 21 A
- Vds - Drain-Source Breakdown Voltage
- 1000 V
- Rds On - Drain-Source Resistance
- 500 mOhms
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- 1 N-Channel
- Height
- 21.34 mm
- Length
- 16.13 mm
- Width
- 5.21 mm
- Forward Transconductance - Min
- 15 S
Show more parameters (9)
- Number of Channels
- 1 Channel
- Channel Mode
- Enhancement
- Fall Time
- 15 ns
- Pd - Power Dissipation
- 500 W
- Qg - Gate Charge
- 160 nC
- Rise Time
- 16 ns
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Unit Weight
- 0.158733 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.