IXYS
IXTA260N055T2-7
MOSFET 260 Amps 55V
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXTA260N055
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 55 V
- Id - Continuous Drain Current
- 260 A
- Rds On - Drain-Source Resistance
- 3.3 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 140 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 480 W
- Channel Mode
- Enhancement
Show more parameters (11)
- Tradename
- HiPerFET
- Height
- 4.7 mm
- Length
- 9.4 mm
- Type
- TrenchT2 Power MOSFET
- Width
- 10.2 mm
- Forward Transconductance - Min
- 55 S
- Fall Time
- 24 ns
- Rise Time
- 27 ns
- Typical Turn-Off Delay Time
- 36 ns
- Typical Turn-On Delay Time
- 20 ns
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.