STMicroelectronics
RF5L15120CB4
RF MOSFET Transistors 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Package
- LBB-5
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2.5 A
- Vds - Drain-Source Breakdown Voltage
- 95 V
- Rds On - Drain-Source Resistance
- 1 Ohms
- Operating Frequency
- 1 GHz
- Gain
- 20 dB
- Output Power
- 120 W
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- CN
- Moisture Sensitive
- Yes
- Number of Channels
- 2 Channel
Show more parameters (3)
- Type
- RF Power MOSFET
- Vgs - Gate-Source Voltage
- - 8 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage
- 2.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.