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Infineon Technologies

FF4MR12W2M1HB70BPSA1

MOSFET Modules CoolSiC MOSFET half-bridge module 1200 V

Basic Information

View Datasheet ↗
Manufacturer
Infineon
Brand
Infineon Technologies
Product Category
MOSFET Modules
Series
M1H
Packaging
Tray

Technical Specifications

12 parameters
Technology
Si
Vds - Drain-Source Breakdown Voltage
1.2 kV
Id - Continuous Drain Current
170 A
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage
5.15 V
Configuration
Dual
Country of Assembly
DE
Country of Diffusion
AT
Country of Origin
AT
Tradename
EasyDUAL CoolSiC
Type
Half Bridge
Part # Aliases
FF4MR12W2M1H_B70 SP005749125

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FF4MR12W2M1HB70BPSA1 Specifications and Datasheet | ChipSourceHub