ON Semiconductor
2SK3557-6-TB-E
RF JFET Transistors LOW-FREQUENCY AMPLIFIER
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- RF JFET Transistors
- Series
- 2SK3557
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Type
- JFET
- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 15 V
- Vgs - Gate-Source Breakdown Voltage
- - 15 V
- Id - Continuous Drain Current
- 50 mA
- Maximum Drain Gate Voltage
- - 15 V
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 200 mW
- Configuration
- Single
- Product
- RF JFET
- Type
- JFET
Show more parameters (3)
- Forward Transconductance - Min
- 35 mS
- Gate-Source Cutoff Voltage
- - 0.7 V
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.