Microchip / Microsemi
2N4900
Bipolar Transistors - BJT Power BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Not compliant (source record)
Technical Specifications
10 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.3 V
- Maximum DC Collector Current
- 1 A
- DC Current Gain hFE Max
- 100
- DC Collector/Base Gain hfe Min
- 20
- Pd - Power Dissipation
- 25 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.