NXP Semiconductors
BFU630F,115
RF Bipolar Transistors Single NPN 21GHz
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF Bipolar Transistors
- Package
- SOT-343F
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 90
- Collector- Emitter Voltage VCEO Max
- 5.5 V
- Emitter- Base Voltage VEBO
- 2.5 V
- Continuous Collector Current
- 3 mA
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Type
- RF Bipolar Small Signal
- Gain Bandwidth Product fT
- 21 GHz
- Pd - Power Dissipation
- 200 mW
Show more parameters (2)
- Part # Aliases
- 934064609115
- Unit Weight
- 0.000235 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.