Infineon Technologies
IMYH200R012M1HXKSA1
SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
24 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 2 kV
- Id - Continuous Drain Current
- 123 A
- Rds On - Drain-Source Resistance
- 16.5 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
- Qg - Gate Charge
- 246 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 552 W
- Channel Mode
- Enhancement
Show more parameters (12)
- Tradename
- CoolSIC
- Configuration
- Single
- Country of Assembly
- MY
- Country of Diffusion
- AT
- Country of Origin
- AT
- Fall Time
- 24 ns
- Forward Transconductance - Min
- 30 S
- Rise Time
- 13 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 50 ns
- Typical Turn-On Delay Time
- 16 ns
- Part # Aliases
- IMYH200R012M1H SP005427368
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.