IXYS
IXFP44N25X3
MOSFET DISCMSFT NCHULTRJNCTX3CLASS
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 250 V
- Id - Continuous Drain Current
- 44 A
- Rds On - Drain-Source Resistance
- 40 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 33 nC
- Pd - Power Dissipation
- 240 W
- Channel Mode
- Enhancement
- Tradename
- HiPerFET
- Forward Transconductance - Min
- 22 S
Show more parameters (4)
- Fall Time
- 12 ns
- Rise Time
- 23 ns
- Typical Turn-Off Delay Time
- 54 ns
- Typical Turn-On Delay Time
- 18 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.