Toshiba
TTC012(Q)
Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TTC012
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 375 V
- Collector- Base Voltage VCBO
- 800 V
- Emitter- Base Voltage VEBO
- 8 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Maximum DC Collector Current
- 2 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250 at 1 mA, 5 V
- DC Collector/Base Gain hfe Min
- 80 at 1 mA, 5 V
- Pd - Power Dissipation
- 1.1 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.