Cree, Inc.
CGH31240F
RF JFET Transistors 240W, GaN HEMT, 28V, 2.7-3.1GHz, IM FET, Flange
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Product Category
- RF JFET Transistors
- Package
- 440201
- Mounting Style
- Screw Mount
Technical Specifications
19 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 12 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Id - Continuous Drain Current
- 24 A
- Output Power
- 240 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 3.76 mm
Show more parameters (7)
- Length
- 24.33 mm
- Operating Frequency
- 2.7 GHz to 3.1 GHz
- Product
- GaN HEMT
- Type
- GaN SiC HEMT
- Width
- 23.62 mm
- Development Kit
- CGH31240F-TB
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.