CEL
NESG270034-EV09-AZ
RF Bipolar Transistors For NESG270034-AZ
Basic Information
View Datasheet ↗- Manufacturer
- CEL
- Product Category
- RF Bipolar Transistors
- Mounting Style
- SMD/SMT
- RoHS
- E
Technical Specifications
6 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Emitter- Base Voltage VEBO
- 2.8 V
- Continuous Collector Current
- 750 mA
- Type
- RF Silicon Germanium
- Pd - Power Dissipation
- 1.9 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.