ROHM Semiconductor
US6M2GTR
MOSFET 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Package
- TUMT-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V, 20 V
- Id - Continuous Drain Current
- 1.5 A, 1 A
- Rds On - Drain-Source Resistance
- 170 mOhms, 280 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V, 2 V
- Vgs - Gate-Source Voltage
- 4.5 V
- Qg - Gate Charge
- 1.6 nC, 2.1 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1 W
- Configuration
- Dual
Show more parameters (6)
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Fall Time
- 6 ns, 10 ns
- Rise Time
- 9 ns, 8 ns
- Typical Turn-Off Delay Time
- 15 ns, 25 ns
- Typical Turn-On Delay Time
- 7 ns, 9 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.