MACOM
NPTB00004A
RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- RF JFET Transistors
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Tray
Technical Specifications
13 parameters- Transistor Type
- HEMT
- Technology
- GaN Si
- Gain
- 16 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 1.4 A
- Maximum Operating Temperature
- + 200 C
- Pd - Power Dissipation
- 11.6 W
- Operating Frequency
- 6 GHz
- Moisture Sensitive
- Yes
- Rds On - Drain-Source Resistance
- 1.6 Ohms
- Vgs th - Gate-Source Threshold Voltage
- - 1.6 V
Show more parameters (1)
- Unit Weight
- 0.007760 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.