onsemi
NVVR26A120M1WSS
Discrete Semiconductor Modules SIC A1HPM 1200 V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Discrete Semiconductor Modules
- Series
- NVVR26A120M1WSS
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
19 parameters- Product
- SiC Modules
- Type
- Power Module
- Technology
- SiC
- Vf - Forward Voltage
- 3.8 V
- Vgs - Gate-Source Voltage
- - 10 V, + 25 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Configuration
- Half Bridge
- Country of Origin
- CN
- Fall Time
- 51 ns
- Id - Continuous Drain Current
- 400 A
- Pd - Power Dissipation
- 1 kW
Show more parameters (7)
- Rise Time
- 59 ns
- Tradename
- EliteSiC
- Transistor Polarity
- N-Channel
- Typical Turn-Off Delay Time
- 220 ns
- Typical Turn-On Delay Time
- 125 ns
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs th - Gate-Source Threshold Voltage
- 3.2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.