ON Semiconductor
NSTB1005DXV5T1G
Bipolar Transistors - BJT 100mA Complementary 50V Dual NPN & PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSTB1005DXV5
- Package
- SOT-553-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Collector-Emitter Saturation Voltage
- 0.25 V
- DC Current Gain hFE Max
- 80 at 5 mA, 10 V at NPN
- Height
- 0.6 mm
- Length
- 1.7 mm
- Width
- 1.3 mm
- Continuous Collector Current
- 0.1 A
- DC Collector/Base Gain hfe Min
- 80
- Pd - Power Dissipation
- 357 mW
Show more parameters (1)
- Unit Weight
- 0.000099 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.