Advanced Semiconductor, Inc.
MRF9045LR1
RF MOSFET Transistors RF Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Advanced Semiconductor, Inc.
- Product Category
- RF MOSFET Transistors
- Package
- NI-360
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 4.25 A
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Gain
- 18.8 dB
- Output Power
- 60 W
- Configuration
- Single
- Operating Frequency
- 945 MHz
- Type
- RF Power MOSFET
- Forward Transconductance - Min
- 3 S
- Pd - Power Dissipation
- 117 W
- Vgs - Gate-Source Voltage
- 15 V
Show more parameters (2)
- Vgs th - Gate-Source Threshold Voltage
- 4.8 V
- Unit Weight
- 0.032480 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.