onsemi
KSD2012GTU
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- KSD2012
- Package
- TO-220F-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Pd - Power Dissipation
- 25 W
- Gain Bandwidth Product fT
- 3 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 3 A
Show more parameters (3)
- Country of Origin
- CN
- DC Current Gain hFE Max
- 320
- Unit Weight
- 0.080072 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.