ROHM Semiconductor
2SCR513RTL
Bipolar Transistors - BJT Trans GP BJT NPN 50V 1A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SCR513p
- Package
- TSMT-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
9 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Gain Bandwidth Product fT
- 360 MHz
- DC Current Gain hFE Max
- 450 mA
- DC Collector/Base Gain hfe Min
- 180
- Pd - Power Dissipation
- 500 mW
- Part # Aliases
- 2SCR513R
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.