MACOM
CGHV60170D-GP4
GaN FETs GaN HEMT Die DC-6.0GHz, 170 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 8 Channel
- Vds - Drain-Source Breakdown Voltage
- 50 V
- Id - Continuous Drain Current
- 12.6 A
- Country of Origin
- US
- Gain
- 18 dB
- Maximum Operating Frequency
- 6 GHz
- Minimum Operating Frequency
- 0 Hz
- Output Power
- 170 W
- Product
- GaN HEMTs
- Technology
- GaN
- Transistor Type
- GaN HEMT
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.