Infineon Technologies
BFP 640FESD H6327
RF Bipolar Transistors RF BI
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP640
- Package
- TSFP-4-1
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
8 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Emitter- Base Voltage VEBO
- 4.8 V
- Continuous Collector Current
- 50 mA
- Type
- RF Silicon Germanium
- Pd - Power Dissipation
- 200 mW
- Part # Aliases
- BFP640FESDH6327XTSA1 BFP64FESDH6327XT SP000890034
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.