Microchip / Microsemi
APT56M50B2
MOSFET FG, MOSFET, 500V, TO-247 T-MAX
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- MOSFET
- Package
- T-MAX-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 56 A
- Rds On - Drain-Source Resistance
- 85 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 220 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 780 W
- Channel Mode
- Enhancement
Show more parameters (9)
- Tradename
- POWER MOS 8
- Height
- 5.31 mm
- Length
- 21.46 mm
- Width
- 16.26 mm
- Forward Transconductance - Min
- 43 S
- Fall Time
- 33 ns
- Rise Time
- 45 ns
- Typical Turn-Off Delay Time
- 100 ns
- Typical Turn-On Delay Time
- 38 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.