Qorvo
QPD1025L
RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- QPD
- Package
- NI-1230-4
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 22.9 dB
- Id - Continuous Drain Current
- 28 A
- Output Power
- 1.5 kW
- Maximum Drain Gate Voltage
- 225 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 758 W
- Application
- Avionics, IFF Transponders
- Configuration
- Dual Gate Dual Drain
- Operating Frequency
- 1 GHz to 1.1 GHz
Show more parameters (2)
- Development Kit
- QPD1025LEVB1
- Moisture Sensitive
- Yes
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.