Qorvo
T1G2028536-FL
RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- T1G
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 20.8 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 36 V
- Vgs - Gate-Source Breakdown Voltage
- 145 V
- Id - Continuous Drain Current
- 24 A
- Output Power
- 260 W
- Maximum Drain Gate Voltage
- 48 V
- Maximum Operating Temperature
- + 275 C
- Pd - Power Dissipation
- 288 W
- Configuration
- Single
Show more parameters (5)
- Operating Frequency
- 2 GHz
- Product
- RF Power Transistor
- Type
- GaN SiC HEMT
- Moisture Sensitive
- Yes
- Part # Aliases
- 1111394
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.