Toshiba
RN1110MFV(TPL3)
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1110MFV
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Not compliant (source record)
Technical Specifications
10 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 700
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- 50 V
- DC Current Gain hFE Max
- 120 @ 1mA @ 5V
- Emitter- Base Voltage VEBO
- 5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.