Vishay Semiconductors
VS-SF100SA120
MOSFET Modules MODULES MOSFETS - SOT-227 SIC MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFET Modules
- Package
- SOT-227-4
- Mounting Style
- Screw Mount
Technical Specifications
22 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 98 A
- Rds On - Drain-Source Resistance
- 32.6 mOhms
- Vgs - Gate-Source Voltage
- - 8 V, 19 V
- Vgs th - Gate-Source Threshold Voltage
- 1.7 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 468 W
- Configuration
- Single
Show more parameters (10)
- Country of Origin
- PH
- Fall Time
- 10.56 ns
- Height
- 12.3 mm
- Length
- 38.3 mm
- Product
- Power Module
- Rise Time
- 44.32 ns
- Type
- Single Switch Silicon Carbide Power MOSFET
- Typical Turn-Off Delay Time
- 36 ns
- Typical Turn-On Delay Time
- 18.88 ns
- Width
- 25.7 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.