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MACOM

GTRA362802FC-V1-R2

GaN FETs 280W GaN HEMT 48V 3400 to 3600MHz

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
GaN FETs
Package
H-37248C-4
Mounting Style
Screw Mount
Packaging
Reel

Technical Specifications

12 parameters
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
125 V
Id - Continuous Drain Current
5.4 A
Maximum Operating Temperature
+ 225 C
Country of Origin
US
Gain
13.5 dB
Maximum Operating Frequency
3.6 GHz
Minimum Operating Frequency
3.4 GHz
Output Power
280 W
Technology
GaN
Transistor Type
GaN HEMT
Vgs - Gate-Source Breakdown Voltage
- 10 V to 2 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

GTRA362802FC-V1-R2 Specifications and Datasheet | ChipSourceHub