Wolfspeed / Cree
CGHV1F025S
RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Package
- DFN-12
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 11 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
- Id - Continuous Drain Current
- 2 A
- Output Power
- 25 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 0.9 mm
Show more parameters (9)
- Length
- 4 mm
- Operating Frequency
- 15 GHz
- Operating Temperature Range
- - 40 C to + 150 C
- Product
- GaN HEMT
- Type
- GaN SiC HEMT
- Width
- 3 mm
- Development Kit
- CGHV1F025S-TB
- Moisture Sensitive
- Yes
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.