Qorvo
QPD1025
RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF MOSFET Transistors
- Series
- QPD
- Package
- NI-1230-4
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- GaN SiC
- Id - Continuous Drain Current
- 28 A
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Gain
- 22.5 dB
- Output Power
- 1.862 kW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Operating Frequency
- 1 GHz to 1.1 GHz
- Type
- RF Power MOSFET
- Number of Channels
- 2 Channel
- Moisture Sensitive
- Yes
Show more parameters (2)
- Pd - Power Dissipation
- 685 W
- Vgs - Gate-Source Voltage
- - 2.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.