Central Semiconductor
2N6609
Bipolar Transistors - BJT 160Vcbo 140Vceo 160Vceb 7.0Vebo 16A
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6609
- Package
- TO-3-2
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 140 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 1.4 V
- Gain Bandwidth Product fT
- 4 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 60
- Continuous Collector Current
- 16 A
- DC Collector/Base Gain hfe Min
- 5
Show more parameters (2)
- Pd - Power Dissipation
- 150 W
- Part # Aliases
- 2N6609 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.