NXP Semiconductors
BFU725F/N1,115
RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF Bipolar Transistors
- Package
- SOT-343
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 40
- Collector- Emitter Voltage VCEO Max
- 2.8 V
- Emitter- Base Voltage VEBO
- 0.55 V
- Continuous Collector Current
- 40 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 10 V
- DC Current Gain hFE Max
- 160 at 10 mA at 2 V
Show more parameters (10)
- Height
- 1 mm
- Length
- 2.2 mm
- Operating Frequency
- 55 GHz
- Type
- RF Bipolar Small Signal
- Width
- 1.35 mm
- Gain Bandwidth Product fT
- 55000 MHz
- Maximum DC Collector Current
- 0.04 A
- Pd - Power Dissipation
- 136 mW
- Part # Aliases
- 934063513115
- Unit Weight
- 0.000235 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.