Central Semiconductor
2N4104 PBFREE
Bipolar Transistors - BJT JFET N-Ch
Basic Information
- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4101
- Mounting Style
- SMD/SMT
- Packaging
- Bulk
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Pd - Power Dissipation
- 30 mW
- Gain Bandwidth Product fT
- 540 MHz
- Continuous Collector Current
- 50 mA
- Country of Origin
- US
- DC Collector/Base Gain hfe Min
- 1400 at 1 mA, 5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.