ON Semiconductor / Fairchild
FGA50S110P
IGBT Transistors 1100 V, 50 A Shorted-anode IGBT
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- IGBT Transistors
- Series
- FGA50S110P
- Package
- TO-3PN
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Technology
- Si
- Collector- Emitter Voltage VCEO Max
- 1100 V
- Collector-Emitter Saturation Voltage
- 2.7 V
- Maximum Gate Emitter Voltage
- 25 V
- Continuous Collector Current at 25 C
- 50 A
- Pd - Power Dissipation
- 300 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Gate-Emitter Leakage Current
- 500 nA
- Unit Weight
- 0.225789 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.