IXYS
150-102N02A-00
RF MOSFET Transistors DE-150 1000V 2A N Channel MOSFET Transistor
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- RF MOSFET Transistors
- Series
- DE
- Package
- SMD-6
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2 A
- Vds - Drain-Source Breakdown Voltage
- 1000 V
- Rds On - Drain-Source Resistance
- 7.8 Ohms
- Output Power
- 200 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Operating Frequency
- 30 MHz
- Type
- RF Power MOSFET
- Forward Transconductance - Min
- 0.8 S
- Number of Channels
- 1 Channel
Show more parameters (3)
- Qg - Gate Charge
- 23 nC
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.