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Infineon Technologies

FF2MR12KM1HHPSA1

Discrete Semiconductor Modules 1200V, 62mm Module with CoolSiC Trench MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Infineon
Brand
Infineon Technologies
Product Category
Discrete Semiconductor Modules
Series
M1H
Mounting Style
Stud Mount
Packaging
Tray

Technical Specifications

20 parameters
Product
CoolSiC Trench MOSFET
Type
Half Bridge
Technology
SiC
Vgs - Gate-Source Voltage
- 10 V, 23 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 175 C
Configuration
Dual
Country of Assembly
HU
Country of Diffusion
AT
Country of Origin
AT
Fall Time
33 ns
Id - Continuous Drain Current
290 A
Show more parameters (8)
Rds On - Drain-Source Resistance
1.96 mOhms
Rise Time
153 ns
Tradename
CoolSiC
Typical Turn-Off Delay Time
150 ns
Typical Turn-On Delay Time
143 ns
Vds - Drain-Source Breakdown Voltage
1.2 kV
Vgs th - Gate-Source Threshold Voltage
3.45 V
Part # Aliases
FF2MR12KM1H SP005861524

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FF2MR12KM1HHPSA1 Specifications and Datasheet | ChipSourceHub