Diodes Incorporated
ZHB6792TA
Bipolar Transistors - BJT H-Bridge-70V
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZHB67
- Package
- SM-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Quad
- Collector- Emitter Voltage VCEO Max
- 70 V
- Collector- Base Voltage VCBO
- 70 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- - 0.5 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 100 MHz, 150 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500
- Height
- 1.6 mm
Show more parameters (5)
- Length
- 6.7 mm
- Width
- 3.7 mm
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 500 at 100 mA, 2 V at NPN, 400 at 500 mA, 2 V at NPN, 150 at 1 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 250 at 500 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP
- Pd - Power Dissipation
- 2000 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.