Vishay Semiconductors
SISS80DN-T1-GE3
MOSFETs N-Channel 20V (D-S)
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SISS
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 210 A
- Rds On - Drain-Source Resistance
- 920 uOhms
- Vgs - Gate-Source Voltage
- - 8 V, 12 V
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
- Qg - Gate Charge
- 81 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 65 W
Show more parameters (3)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Country of Origin
- CN
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.