STMicroelectronics
STBV32-AP
RF Bipolar Transistors HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF Bipolar Transistors
- Series
- STBV32
- Package
- TO-92AP
- Mounting Style
- Through Hole
Technical Specifications
16 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 400 V
- Emitter- Base Voltage VEBO
- 9 V
- Continuous Collector Current
- 1.5 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- DC Current Gain hFE Max
- 20
- Height
- 4.5 mm
- Length
- 4.8 mm
Show more parameters (4)
- Type
- RF Bipolar Small Signal
- Width
- 3.8 mm
- Maximum DC Collector Current
- 1.5 A
- Pd - Power Dissipation
- 1500 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.