Toshiba
MG400Q2YMS3(DAE)
MOSFET Modules SiC MOSFET Module, 1200V, 400A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET Modules
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
16 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 400 A
- Vgs - Gate-Source Voltage
- - 10 V, 25 V
- Vgs th - Gate-Source Threshold Voltage
- 5.6 V
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.35 kW
- Configuration
- Dual
- Country of Origin
- JP
- Fall Time
- 0.06 us
Show more parameters (4)
- Product
- SiC MOSFETS
- Rise Time
- 0.08 us
- Typical Turn-Off Delay Time
- 0.35 us
- Typical Turn-On Delay Time
- 0.19 us
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.