NXP Semiconductors
A3G26H501W17SR3
RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 56 W Avg., 48 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF JFET Transistors
- Package
- NI-780S-4S2S
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- GaN
- Gain
- 13.7 dB
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 42 mA
- Output Power
- 56 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 225 C
- Application
- Cellular Base Station
- Operating Frequency
- 2496 MHz to 2690 MHz
- Class
- Class AB, Class C
- Vgs th - Gate-Source Threshold Voltage
- - 3.5 V, - 3.8 V
- Part # Aliases
- 935387634128
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.