Infineon Technologies
IMBG120R350M1HXTMA1
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Series
- CoolSiC 1200V
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
24 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 4.7 A
- Rds On - Drain-Source Resistance
- 468 mOhms
- Vgs - Gate-Source Voltage
- - 7 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 5.1 V
- Qg - Gate Charge
- 5.9 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 65 W
- Channel Mode
- Enhancement
Show more parameters (12)
- Tradename
- CoolSiC
- Configuration
- Single
- Country of Assembly
- MY
- Country of Diffusion
- AT
- Country of Origin
- MY
- Fall Time
- 16 ns
- Forward Transconductance - Min
- 1.2 S
- Rise Time
- 0.7 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 17 ns
- Typical Turn-On Delay Time
- 6.3 ns
- Part # Aliases
- IMBG120R350M1H SP004463802
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.