ON Semiconductor / Fairchild
KSC5502DTM
Bipolar Transistors - BJT NPN Triple Diffused Planar Silicon
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- KSC5502D
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector- Base Voltage VCBO
- 1.2 kV
- Emitter- Base Voltage VEBO
- 12 V
- Collector-Emitter Saturation Voltage
- 0.31 V
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 11 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 2.3 mm
- Length
- 6.6 mm
Show more parameters (5)
- Width
- 6.1 mm
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 14
- Pd - Power Dissipation
- 75 W
- Unit Weight
- 0.009184 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.